Ixys 1200 v igbt driver

Ucc21750 single channel isolated gate driver for sicigbt with advanced protection and highcmti new. Ixgh20n120a3 ixys semiconductor silicon carbide igbt. The ix2120 is configured with independent highside and lowside referenced output channels which can source and sink 2a. Ixa60 series 1200 v 88 a 290 w single chassis mount igbt sot227b from future electronics text. The ix2127 detects an overcurrent condition in the driven mosfet or igbt device, and shuts down drive to that device. These new igbts are manufactured using ixys stateoftheart genx3tm igbt process and utilize ixys. Developed using ixys xpttm design platform, these new devices feature low collector to emitter saturation voltages v cesat as low as 3.

Ixa37if1200hj ixys semiconductor igbt single transistor. The ix2120b is a high voltage ic that can drive discrete. You are using an unlicensed and unsupported version of dotnetnuke professional edition. Ixys corporations phase leg igbt module mixa225pf1200tsf. This secure and fast mubw1512a7 infineon igbt module from ixys corporation is perfect for your circuit. Power integrations to release fourthquarter financial results on january. Data according to iec 60747and per semiconductor unless otherwise specified 20110330a. Igbt gate driver, and a halfbridge asymmetrical forward converter. V ce 0v, v ge r20v r100 na v cesat i c 20a, v ge 15v, note 1 3. Collectortoemitter breakdown voltage 1200 v, modules, igbt, modules manufactured by vishay, a global leader for semiconductors and passive electronic components.

Whether you need ixys igbt modules or something else, igbt express distributors should be your first choice for igbt and thyristor module or power device. Infineon technologies ag munich, germany has expanded its 1200v discrete igbt product portfolio by offering up to 75 a. This design allows the mcu to alert customers about under or overvoltage conditions on the primary and secondary sides, and overload conditions when the igbt goes into desaturation mode. It has a maximum collector emitter voltage of 1200 v. Ixidm1401 mixa225pf1200tsf modules assembly powered from a single polarity 15 v power supply, ixidm1401 operates two 1200 v igbt devices with a maximum collector current of 360 a. Ixys igbt driver module enables high power systems design with the shortest design time and cost. The new drivers incorporate power integrations proprietary fluxlink, a solid insulator, magnetoinductive coupling, communications technology. Ixys integrated circuits ix2120 1200v high and low side gate driver. Ixidm1403 is a highvoltage isolated gate driver module based on the.

In addition these 1200 v modules can be mounted with the help of pressfit pins for a solderless and leadfree mounting of power modules. Manufacturer of igbt driver dual a316j igbt driver, a316j igbt driver 4 channel, a316j igbt driver 6 channel and skyper 32r driver card offered by v. Ixys corporation, a leading supplier of power semiconductors and ics, has launched ixidm1403 driver module. The high voltage interface is integrated into the bootstrap supply by using two 600v diodes dd1 and dd2. V3000 ixys reserves the right to change limits, conditions and dimensions. Ix2120 1200v high and low side integrated c d gate driver. A necessary companion for discrete power mosfets and igbts as well as digital microcontrollers, dsps and fpgs or analog controllers in any switchedmode power converter, stdrive gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications. Ixa20if1200hb ixys igbts single kynix semiconductor. Highvoltage isolated gate driver module technical articles.

The ixgh20n120a3 is a pt igbt for use with up to 3khz switching applications, battery chargers and inrush current protection circuits. Ixys igbt modules datasheet and inventory igbt express. Igbt gate driver reference design for parallel igbts with. The devices are copacked with a fullrated diode in a to247plus package. The unit connects to a 400 v grid, using 1200 v igbts as the standard powerconversion devices. Powered from a single polarity 15 v power supply, ixidm1401 operates two 1200 v igbt devices with a maximum collector current of 360 a. These igbts were replaced by 1200v sic mosfets, and the significant performance difference is clearly visible in fig. V ce 0v, v ge 20v 100 na v cesat i c 82a, v ge 15v, note 1 2. The unit connects to a 400v grid, using 1200v igbts as the standard powerconversion devices. Silicon carbide mosfets challenge igbts power electronics. The ixa37if1200hj is a xpt igbt features highcurrent handling capabilities, highspeed switching abilities, low total energy losses and low current fall times. This design allows the mcu to alert customers about underovervoltage conditions on the primary and secondary sides, and overload conditions when the igbt goes into desaturation mode. This module is designed for igbt driver parts that enable a short design cycle and the lowest design cost possible, combines supreme compactness with the highest performance and reliability.

Pankaj electronics corporate office a 9, sector 67, noida, u. Ixys ixidm1401 igbt driver module supports dualchannel power up. Ixys objective is to serve the market with igbt driver parts that enable a short design circle as well as the lowest design cost possible. Our isolated drivers incorporate most important key features and parameters for mosfet, igbt, igbt modules, sic mosfet and gan hemt driving. The ixidm1401 is a highvoltage isolated gate driver module based on the ix6610.

The floating highside channel can drive an nchannel power mosfet or igbt 1200v from the common reference. Ixys 1200v xpt high speed igbts are high speed, highgain 1200v insulated gate bipolar transistor products. Highvoltage igbt driver family with reinforced galvanic. Table 2 shows the maximum efficiency and europeanefficiency improvements that were achieved. Ixidm1401 supports dualchannel medium power igbt module up to 3000 v, switching up to 250 khz, shortcircuit protection, advanced active clamping, and supplyvoltage monitoring. Igbts modules mod igbt buck 1200v 270a y3dcb 0 part number must be three character at least. The 1200v xpt high speed igbts feature high current ratings 105a 160a, tc 25 degrees centigrade and are specifically optimized for reduced switching losses in high voltage applications that require hardswitching frequencies of up to 50 khz. The ix2120b is a high voltage, halfbridge gate driver integrated circuit designed to drive discrete power mosfets and igbts that operate up to 1200 v.

Collectortoemitter breakdown voltage 1200 v modules. Galvanic isolated gate driver infineon technologies. Genx3 xpt igbt 1200 v 4 a chassis mount highspeed igbt sot227b from future electronics text. Broadest discrete igbts portfolio at 1200v 29 devices so far from 7a to 120a current ratings at high temperature t c 110c manufactured through ixys s stateoftheart genx3 igbt process and extremelight punchthrough xpt design platform designed for highspeed hardswitching power conversion applications. Igbt ixys reserves the right to change limits, conditions and dimensions. Ucc21710q1 10a sicigbt isolated gate driver with advanced protection new. We make it easy to find the exact ixys igbt module you need. Feb 23, 2016 ixys announces new 1200v halfbridge gate driver. Ixrh 40n120 igbt with reverse v 1200 v blocking capability. Their low gate charges also help reduce gate drive. Ixys igbt driver module enables high power systems design with reduced design time and cost abdus sattar phd, and leonid neyman phd, littelfuse, inc ixys corporations new ixidm1403 driver module, designed with an objective to serve the market with igbt driver parts that enable a short design cycle and the lowest design cost. Ixys corporation expands its 1200v xpt igbt product line. This insulated gate bipolar transistor igbt features a robust and cost effective nonpunch through npt trench construction, and provides superior performance in demanding switching applications. Igbt gate driver, and a halfbridge asymmetrical forward.

Ixys corporation ixys, a global manufacturer of power semiconductors and ics for energy efficiency, power management, transportation, medical, and motor control applications, features a 10 a 4000 v, dual channel, isolated gatedriver. These igbts were replaced by 1200 v sic mosfets, and the significant performance difference is clearly visible in fig. Ucc21736q1 automotive 10a isolated single channel gate driver for sicigbt, active. The ix2120 is a 1200v half bridge gate driver for high voltage igbts and mosfets. A necessary companion for discrete power mosfets and igbts as well as digital microcontrollers, dsps and fpgs or analog controllers in any switchedmode power converter, stdrive gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer. Offer ixa20if1200hb ixys from kynix semiconductor hong kong limited. Three input signals hin, lin, and sd determine the state of the gate driver outputs ho and lo. High voltage gate drivers ixys integrated circuits. Igbt diode 600v v v cemax 900 80 80 80 80 125 125 125 125 125 na 0. This igbt driver board has a minimum operating temperature of 40 c and a maximum of 150 c.

Offer mdi20012a4 ixys from kynix semiconductor hong kong limited. Easy paralleling due to the positive temperature coefficient of the onstate voltage rugged xpt design xtreme light punch through results in. It is configured with independent highside and lowside referenced output channels, both of which can source and sink 2 a of current. The new part expands the companys range of autoqualified driver ics, following the introduction of the 1200 v sid1182kq driver ic. Data according to iec 60747and per semiconductor unless otherwise specified 20140708a. Ixys launches igbt driver module enabling high power. Offering both low on state voltage and minimal switching loss, the igbt is well suited for motor drive control and other hard switching applications. New ixidm1401 driver module combines supreme compactness with the highest performance and reliability. Ixys corporation together with its subsidiary, ixys integrated circuits. Designing reliable, low and medium voltage electronic power systems has been made easier with the introduction of the scaleidriver igbt and power mosfet gate driver from power integrations.

As far as driving igbt is concerned, it resembles a mosfet. Xpt igbt module 45 12 9 10 67 part number mixa80r1200va backside. This mdi10012a3 infineon igbt module from ixys corporation will be able to handle large currents while still performing. Data according to iec 60747and per semiconductor unless otherwise specified 201024a. Power integrations today announced the launch of its automotivequalified sid1181kq scaleidriver gate driver for 750 vrated igbts. Proprietary commonmode design techniques provide stable operation in high dvdt noise environments. They have a positive collectortoemitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Ixys igbt driver module enables high power systems design. Powered from a single polarity 15 v power supply, ixidm1403 operates two 1200 v igbt devices with a maximum collector current of 360 a.